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LTC5507 100kHz to 1GHz RF Power Detector
FEATURES
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DESCRIPTIO
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Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: -34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output Wide VCC Range of 2.7V to 6V Low Operating Current: 550A Low Shutdown Current: <2A Low Profile (1mm) ThinSOTTM Package
The LTC(R)5507 is an RF power detector for applications operating from 100kHz to 1000MHz. The input frequency range is determined by an external capacitor. A temperature-compensated Schottky diode peak detector and buffer amplifier are combined in a small 6-pin ThinSOT package. The RF input voltage is peak detected using an on-chip Schottky diode and external capacitor. The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown mode reduces supply current to less than 2A.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation
APPLICATIO S
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Wireless Transceivers Wireless and Cable Infrastructure RF Power Alarm Envelope Detector
TYPICAL APPLICATIO
Typical Detector Characteristics at 100kHz, 100MHz and 1000MHz
10000 TA = 25C VCC = 2.7V TO 6V
4 VBAT 2.7V TO 6V C2 C1 RF INPUT 6 5
VCC PCAP RFIN
VOUT GND SHDN
5507 TA01
3 2 1
VOUT DETECTED VOLTAGE
VOUT OUTPUT VOLTAGE (mV)
LTC5507
1000
DISABLE ENABLE
Figure 1. 100kHz to 1000MHz RF Power Detector
100 -34
-26
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100kHz, 100MHz 1000MHz -18 -10 -2 6 RF INPUT POWER (dBm) 14
5507 TA01b
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LTC5507
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
ORDER PART NUMBER
TOP VIEW SHDN 1 GND 2 VOUT 3 6 RFIN 5 PCAP 4 VCC
VCC, VOUT to GND .................................... -0.3V to 6.5V RFIN Voltage to GND ......................... (VCC 1.8V) to 7V SHDN Voltage to GND ................ -0.3V to (VCC + 0.3V) PCAP Voltage to GND ........................(VCC - 1.8V) to 7V IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec)................. 300C
LTC5507ES6 S6 PART MARKING LTZX
S6 PACKAGE 6-LEAD PLASTIC SOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, RF Input Signal is Off, unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Shutdown Current IVCC Operating Current VOUT VOL (No RF Input) VOUT Output Current VOUT Enable Time VOUT Load Capacitance VOUT Noise SHDN Voltage, Chip Disabled SHDN Voltage, Chip Enabled SHDN Input Current RFIN Input Frequency Range Max RFIN Input Power RFIN AC Input Resistance RFIN Input Shunt Capacitance Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. (Note 3) F = 10MHz, RF Input = -10dBm F = 1000MHz, RF Input = -10dBm SHDN = 0V SHDN = VCC, IVOUT = 0mA RLOAD = 2k, SHDN = VCC, Enabled SHDN = 0V, Disabled VOUT = 1.75V, VCC = 2.7V to 6V, VOUT = 10mV SHDN = VCC, CLOAD = 33pF, RLOAD = 2k (Note 4) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination VCC = 2.7V to 6V VCC = 2.7V to 6V SHDN = 3.6V
q q q q q q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q q q
TYP
MAX 6 2
UNITS V A mA mV mV mA s pF mVP-P V V A MHz dBm pF
2.7 0.55 130 1 250 1 2 7 2
0.85 370
20 33 0.35
1.4 24 0.1- 1000 14 130 95 1.7 40
Note 3: RF performance is tested at: 80MHz, -4dBm Note 4: Guaranteed by design.
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LTC5507 TYPICAL PERFOR A CE CHARACTERISTICS
LTC5507 Typical Detector Characteristics, 100kHz, VCC = 2.7V TO 6V
10000 C1 = 0.47F C2 = 0.47F 10000
VOUT OUTPUT VOLTAGE (mV)
1000 TA = -40C
VOUT OUTPUT VOLTAGE (mV)
TA = 25C 100 -34 -28 -22 -16 -10 -4 2 RF INPUT POWER (dBm) 8 14
LTC5507 Typical Detector Characteristics, 1000MHz VCC = 2.7V TO 6V
10000 POSITIVE VOUT SLEW RATE (V/s) C1 = 33pF C2 = 33pF
VOUT OUTPUT VOLTAGE (mV)
1000
TA = -40C
100 -34 -28 -22 -16 -10 -4 2 RF INPUT POWER (dBm)
Negative VOUT Slew Rate vs C2 Capacitance
10.000 NEGATIVE VOUT SLEW RATE (V/s) 10000
1.000 VOUT BW (kHz)
0.100
0.010
0.001
0 33
330 3300 33000 C2 CAPACITANCE (pF)
UW
TA = 25C
LTC5507 Typical Detector Characteristics, 100MHz VCC = 2.7V TO 6V
C1 = 1000pF C2 = 1000pF
1000
TA = 85C
TA = -40C TA = 85C TA = 25C
100 -34 -28 -22 -16 -10 -4 2 RF INPUT POWER (dBm)
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5507 G01
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Positive VOUT Slew Rate vs C2 Capacitance
10.0
1.0
0.10
TA = 85C
0.01
8 14
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330 3300 33000 C2 CAPACITANCE (pF)
330000
5507 G04
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VOUT BW vs C2 Capacitance
1000
100
10
330000
5507 G05
1 33
330 3300 33000 C2 CAPACITANCE (pF)
330000
5507 G06
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LTC5507
PI FU CTIO S
SHDN (Pin 1): Shutdown Input. A logic low or no-connect on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 150k pull down resistor to ensure that the part is in shutdown when the enable driver is in a tri-state condition. GND (Pin 2): System Ground. VOUT (Pin 3): Buffered and Level Shifted Detector Output Voltage. VCC (Pin 4): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed with 0.1F and 100pF ceramic capacitors. PCAP (Pin 5): Peak Detector Hold Capacitor. Capacitor value is dependent on RF frequency. Capacitor must be connected between PCAP and VCC. RFIN (Pin 6): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. This pin has an internal 250 termination and an internal Schottky diode detector.
BLOCK DIAGRA
C1 RFSOURCE RFIN C2 VCC PCAP 5 6
GND 2 C1 = C2 C2 (F) 1 , f = LOWEST RF INPUT FREQUENCY (MHz) 30f 1 SHDN
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VCC 4
GAIN COMPRESSION 250 SHDN
+
BUFFER 3 VOUT
-
30k 30k 100
+
RF DET
-
60A 60A 150k BIAS
Figure 2.
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LTC5507
APPLICATIO S I FOR ATIO
Operation The LTC5507 integrates several functions to provide RF power detection over frequencies up to 1000MHz. These functions include an internally compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF signal to DC, a delay circuit to avoid voltage transients at VOUT when coming out of shutdown, and a gain compression circuit to extend the detector dynamic range. Buffer Amplifier The buffer amplifier has a gain of two and is capable of driving a 2mA load. The buffer amplifier typically has an output voltage range of 0.25V to VCC - 0.1V. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The frequency range of the RF pin is typically up to 1000MHz. The detector demonstrates excellent operation over a wide range of input power. The Schottky detector is biased at about 70A. The hold capacitor is external. Gain Compression The gain compression circuit changes the feedback ratio as the RF peak-detected input voltage increases above 60mV. Below 60mV, the DC voltage gain from the peak detector to the buffer output is 4. Above 140mV, the DC voltage gain is reduced to 0.75. The compression expands the low power detector range due to higher gain. Modes of Operation
MODE Shutdown Enable SHDN Low High OPERATION Disabled Power Detect
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Applications The LTC5507 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -34dBm to 14dBm for frequencies up to 1000MHz. The LTC5507 can be used as a demodulator for AM and ASK modulated signals with data rates up to 1.5MHz. Depending on specific application needs, the RSSI output can be split into two branches, providing AC-coupled data (or audio) output and DC-coupled, RSSI output for signal strength measurements and AGC. C1, C2 Capacitor Selection (Refer to Figure 3) C1 couples the RF input signal to the detector input RFIN which is referenced to VCC. C2 is the peak detector capacitor connected between PCAP and VCC. The value of C2 will affect the slew rate and bandwidth. Typically C1 can equal C2. Ceramic capacitors are recommended for C1 and C2. The values for C1 and C2 are dependent on the operating RF frequency. The capacitive reactance should be less than 5 to minimize ripple on C2. C2(F) 1/(30 * f) where f is the lowest RF input frequency (MHz) C1 = C2 In general, select C1 and C2 large enough to pass the lowest expected RF signal frequency, as described by the above formulas. But optimize C1 and C2, subject to this constraint, to improve output slew rate and bandwidth, and to enable good AC performance for the highest expected RF signal frequency.
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LTC5507
APPLICATIO S I FOR ATIO
E4
R3* 22k VCC 1 LTC5507 SHDN GND VOUT RFIN PCAP VCC C1 6 5 4 C2 C4* 0.1F
SHDN
JP1 2 VOUT GND E2 E3 SHDN R2* 68 C5* 3
* OPTIONAL COMPONENTS R2 AND C5 FORM AN OPTIONAL OUTPUT LOWPASS FILTER. R3 IS USED FOR DEMO PURPOSES ONLY, AND IS NOT USED IN ACTUAL PRODUCT IMPLEMENTATION. R4 CAN BE USED FOR INPUT POWER LIMITING OR BROADBAND IMPEDANCE MATCHING. C3 AND C4 ARE OPTIONAL POWER SUPPLY FILTERS.
Figure 3. Evaluation Demo Board Schematic
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R4* J1 RFIN VCC E1 VCC C3* 100pF
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PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
0.62 MAX
0.95 REF
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5507
RELATED PARTS
PART NUMBER DESCRIPTION RF Power Controllers LTC1757A LTC1758 LTC1957 LTC4400 LTC4401 LTC4403 LT5504 LTC5505 LTC5508 LT5500 LT5502 LT5503 LT5506 LT5511 LT5512 RF Power Controller RF Power Controller RF Power Controller ThinSOT RF PA Controller ThinSOT RF PA Controller Multiband RF Power Controllers for EDGE/TDMA 800MHz to 2.7GHz RF Measuring Receivers 300MHz to 3.5GHz RF Power Detector 300MHz to 7GHz RF Power Detector 1.8GHz to 2.7GHz, Receiver Front End 400MHz Quadrature Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 500MHz Quadrature IF Demodulator with VGA High Signal Level Upconverting Mixer High Signal Level Down Converting Mixer Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Supports EDGE/TDMA Applications 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply >40dB Dynamic Range, SC-70 Package Dual LNA gain Setting +13.5dB/-14dB at 2.5GHz, Double-Balanced Mixer, 1.8V to 5.25V Supply 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain 10MHz to 3000MHz RF Output Range, Integrated LO Buffer, 17dBm IIP3 DC-3GHz, 20dBm IIP3, Integrated LO Buffer COMMENTS
Other Related Parts
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
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LT/TP 0103 2K * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2001

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